TOSHIBA 2N3A3120-D
东芝(TOSHIBA)2N3A3120-D 产品描述、产品参数及产品规格(中文版)
产品描述:
东芝2N3A3120-D是一款高性能的N沟道MOSFET(金属氧化物半导体场效应晶体管),专为低功耗和高效率应用而设计。它适用于各种电子设备,如电源管理、马达驱动和信号放大等。2N3A3120-D具有低导通电阻、快速开关速度和出色的热稳定性,可确保系统的高效运行和长寿命。
产品参数:
额定电压:20V
最大电流:3A
导通电阻:120mΩ(最大)
工作温度范围:-55℃至+105℃
封装形式:TO-220
产品规格:
类型:N沟道MOSFET
型号:2N3A3120-D
额定电压:20V
最大电流:3A
导通电阻:120mΩ(最大)
工作温度范围:-55℃至+105℃
封装形式:TO-220
东芝(TOSHIBA)2N3A3120-D Product Description, Product Parameters, and Product Specification (English Version)
Product Description:
Toshiba's 2N3A3120-D is a high-performance N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for low-power consumption and high-efficiency applications. It is suitable for various electronic devices such as power management, motor drivers, and signal amplification. The 2N3A3120-D offers low on-resistance, fast switching speed, and excellent thermal stability, ensuring efficient system operation and longevity.
Product Parameters:
Rated Voltage: 20V
Maximum Current: 3A
On-Resistance: 120mΩ (maximum)
Operating Temperature Range: -55℃ to +105℃
Package Type: TO-220
Product Specification:
Type: N-channel MOSFET
Model: 2N3A3120-D
Rated Voltage: 20V
Maximum Current: 3A
On-Resistance: 120mΩ (maximum)
Operating Temperature Range: -55℃ to +105℃
Package Type: TO-220