东芝（TOSHIBA）2N3A3120-D 产品描述、产品参数及产品规格（中文版）

产品描述：

东芝2N3A3120-D是一款高性能的N沟道MOSFET（金属氧化物半导体场效应晶体管），专为高功率应用而设计。它具有低导通电阻、快速开关速度和高可靠性等特点，适用于各种电源管理、电机驱动和电池管理系统等领域。

产品参数：

额定电压：30V
额定电流：31.2A
导通电阻：最大0.078Ω
漏源电压：最大30V
栅源电压：±20V

产品规格：

类型：N沟道MOSFET
型号：2N3A3120-D
封装形式：TO-252
额定电压：30V
额定电流：31.2A

东芝（TOSHIBA）2N3A3120-D Product Description, Product Parameters, and Product Specification (English Version)

Product Description:

The Toshiba 2N3A3120-D is a high-performance N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) specifically designed for high-power applications. It features low on-resistance, fast switching speed, and high reliability, making it suitable for various power management, motor drive, and battery management systems.

Product Parameters:

*Rated Voltage: 30V
*Rated Current: 31.2A
*On-Resistance: Max 0.078Ω
*Drain-Source Voltage: Max 30V
*Gate-Source Voltage: ±20V

Product Specification:

*Type: N-Channel MOSFET
*Model: 2N3A3120-D
*Package Type: TO-252
*Rated Voltage: 30V
*Rated Current: 31.2A